Method of manufacturing wire grid polarization element

Abstract

In a manufacturing process of a wire grid polarization element, a metal film, a light absorption film, and an inorganic material film for hard mask are sequentially formed, and then a resist mask is formed using nanoimprinting. Next, the metal film is patterned into a plurality of wire-shaped metal layers by dry etching. The resist mask is remaining at the bottom portion of the concave portion interposed between the adjacent convex portions. Δt/P (%), which is obtained by dividing, by the pitch P (nm), the difference Δt (nm) between the maximum value and the minimum value of the thickness t (nm) of the residual film of the resist mask remaining at the bottom portion of the concave portion, is rendered to be 13.4% or less.