The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Dec. 14, 2017
Horiba France Sas, Long Jumeau, FR;
Simon Richard, Palaiseau, FR;
HORIBA FRANCE SAS, Palaiseau, FR;
Abstract
Disclosed is a method for measuring etch depth including the following steps: splitting a light beam into a first, and respectively second, incident beam directed towards a first, respectively second, area of a sample exposed to an etching treatment to form a first, and respectively second, reflected beam, recombining the first reflected beam and the second reflected beam to form an interferometric beam; detecting a first, and respectively second, interferometric intensity signal relative to a first, respectively second, polarisation component; calculating a lower envelope function and an upper envelope function of a differential polarimetric interferometry signal; determining an offset function and a normalisation function from the first lower envelope function and the first upper envelope function; and calculating a differential polarimetric interferometry function normalised locally at each time instant.