The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
May. 18, 2017
Applicant:
Korea University Research and Business Foundation, Seoul, KR;
Inventors:
Young Keun Kim, Seoul, KR;
Yong Jin Kim, Chungcheongbuk-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01L 43/12 (2006.01); H01F 10/14 (2006.01); C23C 14/16 (2006.01); C23C 14/06 (2006.01); H01F 41/18 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3464 (2013.01); C23C 14/067 (2013.01); C23C 14/165 (2013.01); H01F 10/142 (2013.01); H01F 10/3236 (2013.01); H01F 10/3286 (2013.01); H01F 41/18 (2013.01); H01L 43/12 (2013.01); H01F 10/3272 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
A method for forming a multilayer thin film exhibiting perpendicular magnetic anisotropy includes alternately sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form a [CoFeSiB/Pd] multilayer thin film on a substrate disposed inside the vacuum chamber. The number of times the [CoFeSiB/Pd] multilayer thin film is stacked may be 3 or more.