The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Apr. 07, 2016
Applicant:

Rensselaer Polytechnic Institute, Troy, NY (US);

Inventors:

Diana-Andra Borca-Tasciuc, Troy, NY (US);

Mona Mostafa Hella, Watervliet, NY (US);

John Oxaal, Mountain View, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0051 (2013.01); B81B 3/0021 (2013.01); B81C 1/00055 (2013.01); B81C 1/00119 (2013.01); B81C 1/00388 (2013.01); B81C 1/00531 (2013.01); B81C 1/00714 (2013.01);
Abstract

A MEMS device and a method of forming the same. A disclosed method includes: providing a silicon substrate layer, a buried oxide layer and a device silicon layer; using a microfabrication process to pattern a set of device features on the device silicon layer including a shuttle mass and an anchor frame; removing the silicon substrate layer and buried oxide below the shuttle mass; placing a shadow mask on a surface of the device silicon layer, wherein the shadow mask has an microscale opening to expose at least one device feature; and forming a nanoscale stopper on a sidewall of the at least one device feature by depositing a deposition material through the opening in a controlled manner.


Find Patent Forward Citations

Loading…