The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Dec. 23, 2019
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Mazhareddin Taghivand, Santa Clara, CA (US);

Soheil Golara, Costa Mesa, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 19/10 (2006.01); H03B 19/14 (2006.01); H03B 5/12 (2006.01); H03D 7/14 (2006.01); H04B 1/00 (2006.01); H03K 5/00 (2006.01);
U.S. Cl.
CPC ...
H03B 5/1253 (2013.01); H03B 5/1212 (2013.01); H03B 5/1228 (2013.01); H03B 19/10 (2013.01); H03B 19/14 (2013.01); H03D 7/1458 (2013.01); H03K 5/00006 (2013.01); H04B 1/0057 (2013.01); H03B 2201/0225 (2013.01);
Abstract

Aspects of the present disclosure provide a low power differential frequency multiplier. An example frequency multiplier circuit generally includes a first set of transistors, a second set of transistors, and a resonant circuit. The first set of transistors comprises a first transistor and a second transistor, wherein each of the transistors in the first set is a first type of transistor. The second set of transistors comprises a third transistor and a fourth transistor, wherein each of the transistors in the second set is a second type of transistor. The resonant circuit has a first terminal coupled to the first set of transistors and a second terminal coupled to the second set of transistors, wherein the resonant circuit comprises an inductive element and a capacitive element coupled in parallel with the inductive element.


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