The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Nov. 06, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Ajeong Choi, Suwon-si, KR;
Youngjun Yun, Yongin-si, KR;
Yong Uk Lee, Gwangju-si, KR;
Suk Gyu Hahm, Gyungju-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 51/10 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0558 (2013.01); H01L 51/0008 (2013.01); H01L 51/0562 (2013.01); H01L 51/10 (2013.01); H01L 51/105 (2013.01); H01L 51/0074 (2013.01);
Abstract
A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.