The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jan. 18, 2019
3-5 Power Electronics Gmbh, Dresden, DE;
Volker Dudek, Ettlingen, DE;
3-5 Power Electronics GmbH, Dresden, DE;
Abstract
A stacked III-V semiconductor diode having an nlayer having a first surface, a second surface, a dopant concentration of 10N/cmto 10N/cmand a layer thickness of 50 μm to 1,000 μm, a player, which is integrally connected to the first surface and has a dopant concentration of 5·10N/cmto 5·10N/cm, an nlayer, which is integrally connected to the second surface and has a dopant concentration of at least 10N/cm. The player, the nlayer and the nlayer each having a monolithic design and each being made up of a GaAs compound. The dopant concentration of the nlayer having a first value on the first surface and a second value on the second surface, and the second value of the dopant concentration being greater than the first value at least by a factor between 1.5 and 2.5.