The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Jul. 17, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung Soo Kim, Hwaseong-si, KR;

Dong Hyun Roh, Suwon-si, KR;

Koung Min Ryu, Hwaseong-si, KR;

Sang Jin Hyun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/41791 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/7848 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.


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