The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Apr. 24, 2017
Applicant:

Iris Industries SA, Saint-Aubin-Sauges, CH;

Inventor:

Claude Meylan, Saint-Aubin-Sauges, CH;

Assignee:

IRIS INDUSTRIES SA, Saint-Aubin-Sauges, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 27/1465 (2013.01); H01L 27/1469 (2013.01); H01L 27/14607 (2013.01); H01L 27/14687 (2013.01); H01L 27/14692 (2013.01); H01L 27/14627 (2013.01);
Abstract

The invention relates to short-wave infrared (SWIR) detector arrays, and methods for forming such arrays, comprising a light conversion layer () having a germanium-tin alloy composition. The shortwave infrared (SWIR) detector array comprises an absorber wafer (II) and a readout wafer (I). The absorber wafer (II) comprises a SWIR conversion layer () which has a Gei-xSnalloy composition. The SWIR conversion layer () may have an internal structure comprising an array of rods () extending between a patterned support layer () and a doped silicon layer (). The detector comprises also a readout wafer (I) including an array of charge collecting areas and a readout electric circuit. The readout wafer (I) and the absorber wafer (II) are bonded by a low temperature bonding technique. The invention also relates to methods of fabrication of the SWIR detector array and to SWIR detector array applications such as a multi/hyperspectral LIDAR imaging systems.


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