The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Jul. 02, 2019
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Stanley Micinski, Meridian, ID (US);

Swarnal Borthakur, Boise, ID (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14629 (2013.01); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14649 (2013.01);
Abstract

An imaging device may have an array of image sensor pixels that includes infrared image pixels. Backside and frontside reflectors may be incorporated into the infrared pixels to increase effective thicknesses of photosensitive regions within the pixels. In other words, light incident on each pixel may be reflected and traverse the photosensitive region multiple times, thereby allowing silicon in the photosensitive region to absorb infrared light more efficiently. The backside reflector may be interposed between the silicon and a microlens, which may have a toroidal shape to direct light around the backside reflector. If desired, the toroidal lens may have a concave opening. Alternatively, the backside reflector may be ring-shaped, and a spherical microlens may focus light through a center portion of the reflector. A top surface of the silicon layer may be curved to focus light toward the center of the photosensitive region and improve pixel efficiency.


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