The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Feb. 12, 2019
Applicant:
Samsung Display Co., Ltd., Yongin-si, KR;
Inventors:
Jun Hee Lee, Yongin-si, KR;
Sung Hoon Moon, Yongin-si, KR;
Dong Hyun Son, Yongin-si, KR;
Pil Soo Ahn, Yongin-si, KR;
Kohei Ebisuno, Yongin-si, KR;
Sang Hoon Oh, Yongin-si, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 51/00 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1262 (2013.01); H01L 27/3246 (2013.01); H01L 29/78603 (2013.01); H01L 51/0097 (2013.01); H01L 27/3244 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01); H01L 2251/5338 (2013.01);
Abstract
A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.