The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jul. 30, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kwang-soo Kim, Hwaseong-si, KR;
Yong-seok Kim, Suwon-si, KR;
Tae-hun Kim, Gwacheon-si, KR;
Min-kyung Bae, Hwaseong-si, KR;
Jae-hoon Jang, Seongnam-si, KR;
Kohji Kanamori, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, a common source extension structure including a first semiconductor layer having an n-type conductivity and a gate insulating layer between the substrate and the channel structures, a plurality of gate electrodes on the common source extension structure and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension structure and including a second semiconductor layer having an n-type conductivity. An upper portion of the common source extension structure has a first width, and a lower portion of the common source extension structure has a second width smaller than the first width.