The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Nov. 29, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Pyung-Ho Kim, Seoul, KR;

Seong-Mo Koo, Seoul, KR;

Kuk-Han Yoon, Suwon-si, KR;

Ki-Youl Kim, Seoul, KR;

Yong-Hwan Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10852 (2013.01); H01L 27/10814 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/10891 (2013.01); H01L 21/32134 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01L 27/10823 (2013.01);
Abstract

Disclosed are semiconductor devices and methods of manufacturing the same. A support layer and a mold layer are partially etched off from the substrate, to form a mold pattern and a support pattern on the substrate such that a contact hole is formed through the support pattern and the mold pattern and an interconnector is exposed therethrough. A lower electrode layer is formed on the mask pattern to fill the contact hole, and a lower electrode is formed in the contact hole by partially removing the lower electrode layer and the mask pattern. The lower electrode is contact with the interconnector and is supported by the support pattern having the same thickness as the support layer.


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