The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Feb. 24, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Wei-E Wang, Austin, TX (US);
Titash Rakshit, Austin, TX (US);
Borna J. Obradovic, Leander, TX (US);
Chris Bowen, Austin, TX (US);
Mark S. Rodder, Dallas, TX (US);
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/66 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 21/822 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/84 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/02068 (2013.01); H01L 21/02164 (2013.01); H01L 21/02175 (2013.01); H01L 21/02236 (2013.01); H01L 21/02244 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/28088 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/8221 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 21/823871 (2013.01); H01L 21/84 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53228 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H01L 27/0688 (2013.01); H01L 27/092 (2013.01); H01L 27/1203 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1259 (2013.01); H01L 29/04 (2013.01); H01L 29/16 (2013.01); H01L 29/47 (2013.01); H01L 29/665 (2013.01);
Abstract
A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is Mor higher. Each of the FETs includes a channel region of a crystalline material. The crystalline material may include polycrystalline silicon. The upper metal routing layer Mor higher may include cobalt.