The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Feb. 05, 2019
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Keiichiro Matsuo, Yokohama, JP;
Susumu Obata, Yokohama, JP;
Mitsuo Sano, Yokohama, JP;
Kazuhito Higuchi, Yokohama, JP;
Kazuo Shimokawa, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/76873 (2013.01);
Abstract
An etching method according to an embodiment includes forming an uneven structure including a projection on a surface of a semiconductor substrate; forming a catalyst layer including a noble metal on the surface selectively at a top surface of the projection; and supplying an etchant to the catalyst layer to cause an etching of the semiconductor substrate with an assist from the noble metal as a catalyst.