The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Apr. 30, 2019
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Boris N. Feigelson, Springfield, VA (US);
Francis J. Kub, Arnold, MD (US);
Alan G. Jacobs, Arlington, VA (US);
Abstract
An enhanced symmetric multicycle rapid thermal annealing process for removing defects and activating implanted dopant impurities in a III-nitride semiconductor sample. A sample is placed in an enclosure and heated to a temperature Tunder an applied pressure Pfor a time t. While the heating of the sample is maintained, the sample is subjected to a series of rapid laser irradiations under an applied pressure Pand a baseline temperature T. Each of the laser irradiations heats the sample to a temperature Tabove its thermodynamic stability limit. After a predetermined number of temperature pulses or a predetermined period of time, the laser irradiations are stopped and the sample is brought to a temperature Tand held at Tfor a time tto complete the annealing.