The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jun. 05, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyun Jo Kim, Seoul, KR;
Se Wan Park, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor device includes forming first sacrificial cores on a first region of a lower structure and second sacrificial cores on a second region of the lower structure, forming spacers on side walls of the first sacrificial cores and side walls of the second sacrificial cores, forming a protective pattern covering the second sacrificial cores on the second region of the lower structure, removing the first sacrificial cores from the first region, and etching the lower structure using the spacers on the first region, and the second sacrificial cores and the spacers on the second region. By using only spacers as an etching mask in the first region and the sacrificial cores with the spacers as an etching mask in the second region, patterns with different widths are formed simultaneously on the first and second regions.