The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jun. 06, 2019
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Bok Ki Min, Daejeon, KR;
Choon Gi Choi, Daejeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/38 (2006.01); H01L 21/477 (2006.01); H01L 29/16 (2006.01); C23C 14/06 (2006.01); C23C 16/455 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); C23C 14/06 (2013.01); C23C 16/45525 (2013.01); H01L 21/0259 (2013.01); H01L 21/38 (2013.01); H01L 21/477 (2013.01); H01L 29/0657 (2013.01); H01L 29/1606 (2013.01); H01J 2201/30469 (2013.01); H01J 2329/0455 (2013.01);
Abstract
Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.