The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Feb. 20, 2015
Applicant:
Jx Nippon Mining & Metals Corporation, Tokyo, JP;
Inventor:
Yoshimasa Koido, Ibaraki, JP;
Assignee:
JX NIPPON MINING & METALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/14 (2006.01); C23C 14/10 (2006.01); C23C 14/08 (2006.01); C23C 14/06 (2006.01); B22F 9/08 (2006.01); B22F 9/04 (2006.01); B22F 3/15 (2006.01); C22C 28/00 (2006.01); C22C 12/00 (2006.01); C22C 1/04 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); B22F 3/15 (2013.01); B22F 9/04 (2013.01); B22F 9/082 (2013.01); C22C 1/04 (2013.01); C22C 12/00 (2013.01); C22C 28/00 (2013.01); C23C 14/0623 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/086 (2013.01); C23C 14/10 (2013.01); C23C 14/14 (2013.01); C23C 14/3414 (2013.01); B22F 2009/044 (2013.01); B22F 2009/0848 (2013.01);
Abstract
Sb—Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 μm or less. An object of this invention is to improve the texture of the Sb—Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.