The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Nov. 15, 2018
Applicant:

Intel Ip Corporation, Santa Clara, CA (US);

Inventors:

Chi-Taou Robert Tsai, Chandler, AZ (US);

Lillian G. Lent, Chandler, AZ (US);

Curtiss D. Roberts, Chandler, AZ (US);

Cindy Muir, Tempe, AZ (US);

Assignee:

Intel IP Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 27/24 (2006.01); H01F 41/04 (2006.01); H01F 27/28 (2006.01);
U.S. Cl.
CPC ...
H01F 27/2847 (2013.01); H01F 41/04 (2013.01);
Abstract

An inductor has a conductor layer formed by multiple concentric co-planar turns of a first metal layer (e.g., ultra-thick metal (UTM)) adapted to receive current at a frequency of at least one gigahertz. The multiple turns of the first metal layer proceed from an innermost turn to an outermost turn, and a stacking layer of a second metal is provided over each of the first metal layer turns except at least the innermost turn, thereby optimizing the Q of the inductor.


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