The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Oct. 17, 2019
Applicant:

Silicon Motion Inc., Hsinchu County, TW;

Inventors:

Tsung-Chieh Yang, Hsinchu, TW;

Hsiao-Te Chang, Hsinchu County, TW;

Wen-Long Wang, Hsinchu, TW;

Assignee:

Silicon Motion, Inc., Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/26 (2006.01); G06F 3/06 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 3/0604 (2013.01); G06F 3/0622 (2013.01); G06F 3/0629 (2013.01); G06F 3/0638 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01);
Abstract

A method for performing memory access includes: performing a first sensing operation corresponding to a first sensing voltage and performing at least a second sensing operation corresponding to a second sensing voltage to respectively generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value, the second digital value, and charge distribution statistics information of the Flash memory to obtain soft information of a bit stored in the Flash cell, wherein the soft information corresponds to a threshold voltage of the Flash cell; and using the soft information to perform soft decoding.


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