The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10852645 B1

Date of Patent:

Dec. 01, 2020

Filed:

May. 01, 2019

Method of minimizing errors of optical proximity correction in semiconductor pattern and device for performing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Moo Joon Shin, Hwaseong-si, KR;

Kyung Jae Park, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;

Attorney:

Lee IP Law, P.C.

Primary Examiner:

Suchin Parihar

Int. Cl.

CPC ...

G06F 30/00 (2020.01); G03F 7/20 (2006.01); G06F 30/20 (2020.01);

U.S. Cl.

CPC ...

G03F 7/70441 (2013.01); G06F 30/20 (2020.01);

Abstract

In a method for minimizing optical proximity correction errors in a semiconductor pattern. The method includes modifying a mask in a quantized unit to reduce an edge placement error between a simulation layout shape and a target layout shape; adjusting a critical dimension (CD) error between a CD of the simulation layout shape and a CD of the target layout shape to generate an adjusted CD error by further modifying at least one side of the mask in a predetermined unit; and reforming the simulation layout shape by modifying each side of the mask with arbitrary correction values.

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