The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Apr. 16, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Byung-je Jung, Hwaseong-si, KR;
No-young Chung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An optical proximity correction (OPC) method may include providing a design layout including conductive patterns, determining line end void (LEV)-risk patterns among the conductive patterns, the LEV-risk patterns each having a risk of suffering from poor contact due to an LEV, setting markers including portions of the LEV-risk patterns and portions of the conductive patterns adjacent to the LEV-risk patterns, performing a first OPC on first patterns included in the markers and performing a second OPC on second patterns outside the markers, the second OPC being different from the first OPC, and each of the first OPC and the second OPC being performed a plurality of times, and calculating a cost function of each of the markers. The determining may include comparing risks of occurrence of poor contact in each of the conductive patterns based on a scoring function, and the scoring function may be inversely proportional to a width of each of the conductive patterns.