The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Mar. 14, 2017
Applicant:

Nippon Telegraph and Telephone Corporation, Tokyo, JP;

Inventors:

Ken Tsuzuki, Atsugi, JP;

Yuriko Kawamura, Atsugi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/225 (2006.01);
U.S. Cl.
CPC ...
G02F 1/2255 (2013.01); G02F 1/2257 (2013.01); G02F 2201/063 (2013.01);
Abstract

In a dual electrode Si optical modulator having a CPW electrode structure according to a related art, a phase difference of return currents propagating through two ground electrodes degrades the modulation frequency characteristic. To prevent this degradation, the modulator length has been shortened to terminate signal propagation before occurrence of a phase difference. However, a short modulator length would reduce an electric field applied to the optical waveguide, thus lowering the modulation efficiency. An optical modulator according to the present invention includes a bridge wiring that connects two ground electrodes, disposed between an RF electrode and an optical waveguide inside a substrate. The bridge wiring equalizes the potential between the two ground electrodes of the CPW, thereby eliminating a phase difference of return currents induced by a radio-frequency electrical signal to the RF electrode and propagating through the two ground electrodes. It is thus possible to fabricate a Si optical modulator with suppressed degradation of the radio frequency characteristic.


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