The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Mar. 30, 2018
Tower Semiconductor Ltd., Migdal Haemek, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A sensor circuit having a Single Photon Avalanche Diode (SPAD) and an active quenching circuit including a quenching transistor controlled by a one-shot (or similar) circuit is disclosed. The quenching transistor applies a reverse-bias voltage level on the cathode of the SPAD. During photon detection events, pulses generated by the SPAD's avalanche breakdown trigger the one-shot circuit to de-actuate the quenching transistor, allowing the cathode potential to drop below the SPAD's breakdown voltage. After a delay period, which is defined by the one-shot's configuration, allows reliable completion of the avalanche breakdown process, the one-shot circuit re-actuates the quenching transistor such that the SPAD's cathode is refreshed to the reverse-bias voltage level. The one-shot circuit is optionally coupled by way of capacitors to the SPAD and the quenching transistor to facilitate implementation using standard CMOS elements. The sensor is suitable for use in a LIDAR system.