The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Nov. 17, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Masahiro Sato, Tokyo, JP;

Machiko Kametani, Tokyo, JP;

Jun Ogi, Kanagawa, JP;

Yuri Kato, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33/483 (2006.01); G01N 27/27 (2006.01); G01N 27/30 (2006.01); G01N 33/487 (2006.01); H01L 27/02 (2006.01); H03F 1/52 (2006.01);
U.S. Cl.
CPC ...
G01N 33/4836 (2013.01); G01N 27/27 (2013.01); G01N 27/30 (2013.01); G01N 33/48728 (2013.01); H01L 27/0255 (2013.01); H03F 1/52 (2013.01);
Abstract

The present disclosure relates to a semiconductor apparatus and a potential measuring apparatus capable of preventing electrostatic breakdown in an electrode formation process when an electrode and an amplifier are provided on a same substrate. A diode is provided of which a cathode is connected to a previous stage of an amplifying transistor for amplifying a signal read by a read electrode for reading a potential having contact with liquid in which a specimen is input and an anode is grounded. With such a configuration, by bypassing a negative charge generated between the electrode and the amplifying transistor in the electrode formation process from the diode and discharging the negative charge toward ground so as to prevent electrostatic breakdown. This is applicable to a bioelectric potential measuring apparatus.


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