The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jul. 10, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Taekhoon Kim, Hwaseong-si, KR;
Seonmyeong Choi, Suwon-si, KR;
Jongmin Lee, Hwaseong-si, KR;
Tae Gon Kim, Hwaseong-si, KR;
Young Seok Park, Yongin-si, KR;
Shin Ae Jun, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;
SAMSUNG SDI CO., LTD., Gyeonggi-Do, KR;
Abstract
A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.