The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Apr. 23, 2018
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventor:

Takeshi Shiomi, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/217 (2006.01); H01L 27/06 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H02M 7/2176 (2013.01); H01L 27/0629 (2013.01); H01L 29/7786 (2013.01);
Abstract

In a rectifying circuit including a HEMT and a diode connected antiparallel to the HEMT, a forward voltage drop when the diode starts to be conductive is made smaller than a voltage drop when the HEMT is reverse-conductive in an OFF state corresponding to an amount of rectified current when the HEMT is reverse-conductive in an ON state, inductance of a pathway extending through the diode is made larger than inductance of a pathway extending through the HEMT among the pathways connecting a source terminal and a drain terminal of the HEMT, and an amount of charge accumulated in a parasitic capacitance of the diode is made smaller than an amount of charge accumulated in an output capacitance of the HEMT. With this, there is provided a rectifying circuit in which switching loss due to the charge accumulated in the output capacitance of the HEMT is reduced.


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