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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10847950 B1

PDFFull Text
Date of Patent:
Nov. 24, 2020

Filed:

Aug. 21, 2018

Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Yutaka Onishi, Osaka, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;

Attorney:

Smith, Gambrell & Russell, LLP.

Primary Examiner:

Tod T Van Roy

Assistant Examiner:

Delma R Fordé

Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/187 (2006.01); H01S 5/042 (2006.01); H01S 5/024 (2006.01); H01S 5/343 (2006.01); H01L 21/24 (2006.01); H01L 21/285 (2006.01); H01L 21/308 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01S 5/187 (2013.01); H01L 21/246 (2013.01); H01L 21/28575 (2013.01); H01L 21/308 (2013.01); H01S 5/02461 (2013.01); H01S 5/0421 (2013.01); H01S 5/18313 (2013.01); H01S 5/18327 (2013.01); H01S 5/18333 (2013.01); H01S 5/18361 (2013.01); H01S 5/18369 (2013.01); H01S 5/18372 (2013.01); H01S 5/18377 (2013.01); H01S 5/3432 (2013.01); H01S 5/04257 (2019.08); H01S 5/18311 (2013.01); H01S 5/18358 (2013.01); H01S 5/305 (2013.01); H01S 5/3054 (2013.01); H01S 5/34313 (2013.01); Y10S 438/956 (2013.01);
Abstract

A vertical cavity surface emitting laser includes: a supporting base; and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region. The upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region are arranged on the supporting base. The lower distributed Bragg reflecting region includes first semiconductor layers and second semiconductor layers alternately with each of the first semiconductor layers having a refractive index lower than that of each of the second semiconductor layers. The upper distributed Bragg reflecting region includes first layers and second layers alternately with each of the first layers having a group III-V compound semiconductor portion and a group III oxide portion. The group III-V compound semiconductor portion contains aluminum as a group III constituent element, and the group III oxide portion surrounds the group III-V compound semiconductor portion.

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