The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
May. 03, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Inventors:
Whan Kyun Kim, Seoul, KR;
Eun Sun Noh, Yongin-Si, KR;
Joon Myoung Lee, Anyang-Si, KR;
Woo Chang Lim, Seongnam-Si, KR;
Jun Ho Jeong, Hwaseong-Si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/00 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 27/12 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/161 (2013.01); H01L 27/1222 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract
A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.