The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Nov. 28, 2018
Applicant:
Everspin Technologies, Inc., Chandler, AZ (US);
Inventors:
Sarin A. Deshpande, Chandler, AZ (US);
Jon Slaughter, Slingerlands, NY (US);
Cong Hai, Singapore, SG;
Hyunwoo Yang, Singapore, SG;
Naganivetha Thiyagarajah, Singapore, SG;
Shukai Ye, Singapore, SG;
Assignee:
Everspin Technologies, Inc., Chandler, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract
A method of fabricating a magnetoresistive device includes etching a magnetoresistive stack using a first etching process to form one or more sidewalls, and etching the stack using a second etching process after forming the one or more sidewalls. Wherein, the second etching process may be relatively more isotropic than the first etching process.