The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jan. 09, 2019
Fujifilm Corporation, Tokyo, JP;
Hiroki Sugiura, Ashigara-kami-gun, JP;
Yoshinori Kanazawa, Ashigara-kami-gun, JP;
Kimiatsu Nomura, Kanagawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
An object of the present invention is to provide a semiconductor layer (n-type semiconductor layer) which demonstrate an excellent thermoelectric conversion performance and exhibits n-type characteristics. Another object of the present invention is to provide a thermoelectric conversion layer formed of the n-type semiconductor layer and a composition for forming an n-type semiconductor layer. Still another object of the present invention is to provide a thermoelectric conversion element, which has the thermoelectric conversion layer as an n-type thermoelectric conversion layer, and a thermoelectric conversion module. The n-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and an onium salt represented by a specific structure.