The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jul. 25, 2018
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
Kosuke Sato, Tokyo, JP;
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
Abstract
This invention provides a nitride semiconductor light emitting device in which current concentration is suppressed without excessively increasing resistance at a low cost without increasing a manufacturing process. The planar shape of a mesa portion configuring a nitride semiconductor light emitting device is a shape containing a convex-shaped tip portionformed by a curved line or a plurality of straight lines and a base portioncontinuous to the convex-shaped tip portion, in which an obtuse angle is formed by adjacent two straight lines in the convex-shaped tip portion formed by the plurality of straight lines. The first electrode layerhas visible outlinesandalong a visible outlineof the mesa portion through a gapin planar view. The relationship between a gap Win the convex-shaped tip portionand a gap Win the base portionis W> W