The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Nov. 29, 2019
Applicant:
Elenion Technologies, Llc, New York, NY (US);
Inventors:
Thomas Baehr-Jones, Arcadia, CA (US);
Yi Zhang, Jersey City, NJ (US);
Michael J. Hochberg, New York, NY (US);
Ari Novack, New York, NY (US);
Assignee:
Elenion Technologies, LLC, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/107 (2006.01); H01L 27/146 (2006.01); H01L 31/105 (2006.01); H01L 31/028 (2006.01); H01L 31/0256 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 27/14638 (2013.01); H01L 27/14649 (2013.01); H01L 27/14685 (2013.01); H01L 27/14698 (2013.01); H01L 31/028 (2013.01); H01L 31/0256 (2013.01); H01L 31/105 (2013.01); H01L 31/107 (2013.01); H01L 31/1808 (2013.01); Y02E 10/547 (2013.01);
Abstract
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.