The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Aug. 20, 2019
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Mohammed Tanvir Quddus, Chandler, AZ (US);
Mihir Mudholkar, Tempe, AZ (US);
Michael Thomason, Blackfoot, ID (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.