The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Mar. 19, 2019
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;

Inventor:

Takuo Kikuchi, Kamakura, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/28158 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/401 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/511 (2013.01); H01L 29/518 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first, second, and third semiconductor regions, first, second, and third electrodes, and a first insulating portion. The first semiconductor region includes first and second partial regions. A first direction from the second partial region toward the second semiconductor region crosses a second direction from the second region toward the first partial region. The third semiconductor region is provided between the second partial region and the second semiconductor region in the first direction. The first insulating portion includes a first insulating region provided between the third semiconductor region and the first electrode in the second direction, a second insulating region provided between the first partial region and the first electrode in the first direction, and a third insulating region provided between the first partial region and the first insulating region in the first direction.


Find Patent Forward Citations

Loading…