The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Apr. 23, 2019
Applicant:
Navitas Semiconductor, Inc., El Segundo, CA (US);
Inventors:
Daniel M. Kinzer, El Segundo, CA (US);
Maher J. Hamdan, Lake Forest, CA (US);
Assignee:
NAVITAS SEMICONDUCTOR LIMITED, Dublin, IE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/0696 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01); H01L 29/42356 (2013.01); H01L 29/7786 (2013.01);
Abstract
A gallium nitride transistor includes one or more P-type hole injection structures that are positioned between the gate and the drain. The P-type hole injection structures are configured to inject holes in the transistor channel to combine with trapped carriers (e.g., electrons) so the electrical conductivity of the channel is less susceptible to previous voltage potentials applied to the transistor.