The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jun. 12, 2018
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Eun-Sung Lee, Seoul, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 21/28026 (2013.01); H01L 21/823456 (2013.01); H01L 23/564 (2013.01); H01L 27/088 (2013.01);
Abstract
A semiconductor device includes: a first transistor that includes a first gate stack; a second transistor that includes a second gate stack having a narrower width than the first gate stack; and a dummy gate stack disposed around the first gate stack and the second gate stack, wherein the dummy gate stack includes an oxygen sink layer for capturing oxygen atoms that are diffused from an exterior into the first gate stack and the second gate stack.