The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Feb. 22, 2019
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Atsushi Amo, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 29/792 (2006.01); H01L 29/51 (2006.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 29/42344 (2013.01); H01L 21/28 (2013.01); H01L 21/28158 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/40117 (2019.08); H01L 29/423 (2013.01); H01L 29/51 (2013.01); H01L 29/792 (2013.01);
Abstract

A semiconductor device according to one embodiment includes: a semiconductor substrate having a first surface; a first conductive film that is located over the first surface and is formed to circle in plan view; a second conductive film that is located over the first surface and surrounds the outer periphery of the first conductive film in plan view; a first insulating spacer located between the first conductive film and the second conductive film; a first gate insulating film that is located between the first surface and the first conductive film and the accumulated amount of charges of which changes due to a change in the voltage between the first conductive film and the semiconductor substrate; and a second gate insulating film located between the first surface and the second conductive film.


Find Patent Forward Citations

Loading…