logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10847626 B1

PDFFull Text
Date of Patent:
Nov. 24, 2020

Filed:

Dec. 21, 2018

Stacked iii-v semiconductor component

Applicant:

3-5 Power Electronics Gmbh, Dresden, DE;

Inventor:

Volker Dudek, Ettlingen, DE;

Assignee:

3-5 Power Electronics GmbH, Dresden, DE;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/207 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/205 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/207 (2013.01); H01L 21/02546 (2013.01); H01L 21/304 (2013.01); H01L 29/0619 (2013.01); H01L 29/0692 (2013.01); H01L 29/20 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/66204 (2013.01); H01L 29/66212 (2013.01); H01L 29/66333 (2013.01); H01L 29/66348 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 21/30625 (2013.01); H01L 29/205 (2013.01);
Abstract

A stacked III-V semiconductor component having a pregion with a top side, a bottom side, and a dopant concentration of 5·10-5·10N/cm, a first nlayer with a top side and a bottom side, a dopant concentration of 10-10N/cm, and a layer thickness of 10-300 μm, an nregion with a top side, a bottom side, and a dopant concentration of at least 10N/cm, wherein the pregions, the nlayer, and the nregion follow one another in the stated order, are each formed monolithically, and each comprise a GaAs compound or consist of a GaAs compound, the nregion or the pregion is formed as the substrate layer, and the nlayer comprises chromium with a concentration of at least 10N/cmor at least 10N/cm.

Find Patent Forward Citations

Loading…