The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jan. 09, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kyungin Choi, Seoul, KR;
Hyunchul Song, Seoul, KR;
Sunjung Kim, Suwon-si, KR;
Taegon Kim, Seoul, KR;
Seong Hoon Jeong, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/3115 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/11 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/3105 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 29/0847 (2013.01); H01L 21/02208 (2013.01); H01L 21/308 (2013.01); H01L 21/823821 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.