The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Mar. 22, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sun-min Moon, Yongin-si, KR;
Su-hwan Kim, Seoul, KR;
Hyun-jun Kim, Seoul, KR;
Seong-yul Park, Seoul, KR;
Young-lim Park, Anyang-si, KR;
Jae-wan Chang, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02205 (2013.01); H01L 21/28568 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 28/92 (2013.01); H01L 27/10852 (2013.01);
Abstract
In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.