The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Aug. 01, 2019
Applicant:

Toppan Printing Co., Ltd., Taito-ku, JP;

Inventor:

Makoto Nishizawa, Taito-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01);
Abstract

A thin film transistor array including thin film transistor elements including an insulating substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a channel region formed between the source electrode and the drain electrode, the thin film transistor elements being arrayed in a matrix, a disconnection pattern including an insulating material and formed in stripes extending over the thin film transistor elements, the disconnection pattern having a maximum film thickness of 200 nm-3000 nm, and a semiconductor pattern formed in stripes perpendicular to the disconnection pattern and extending over the channel region of the thin film transistor elements, the semiconductor pattern being disconnected at an intersection with the disconnection pattern.


Find Patent Forward Citations

Loading…