The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Nov. 28, 2018
Applicant:

Sang-hun Lee, Gyeonggi-do, KR;

Inventor:

Sang-Hun Lee, Gyeonggi-do, KR;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 23/34 (2006.01); H01L 23/528 (2006.01); G01R 31/40 (2020.01); G01R 31/28 (2006.01); H01L 21/66 (2006.01); G01R 31/26 (2020.01);
U.S. Cl.
CPC ...
H01L 27/0251 (2013.01); G01R 31/2822 (2013.01); G01R 31/40 (2013.01); H01L 22/34 (2013.01); H01L 23/34 (2013.01); H01L 23/5286 (2013.01); G01R 31/2644 (2013.01); G01R 31/2831 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01);
Abstract

The present disclosure provides an RF power device including: a single RF power transistor; a pad spaced apart from the single RF power transistor and configured to transmit a temperature and RF characteristic information of the single RF power transistor to an outside; and a temperature and RF characteristic detector connected between the pad and the ground and configured to detect the temperature and the RF characteristics of the single RF power transistor, and is characterized in that the ground is connected to the single RF power transistor, and the single RF power transistor, the pad, and the temperature and RF characteristic detector are manufactured on the same wafer.


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