The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Aug. 12, 2019
Infineon Technologies Ag, Neubiberg, DE;
Joost Adriaan Willemen, Munich, DE;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A semiconductor device includes a composite pn-junction structure in a semiconductor substrate, wherein the composite pn-junction structure has a first junction grading coefficient m, with m≥0.50. The composite pn-junction structure includes a first partial pn-junction structure and a second partial pn-junction structure, wherein the first partial pn-junction structure has a first partial junction grading coefficient m, and wherein the second partial pn-junction structure has a second partial junction grading coefficient m. The first partial junction grading coefficient mis different to the second partial junction grading coefficient m, with m≠m. At least one of the first and second partial junction grading coefficients m, mis greater than 0.50, with mand/or m>0.50. The first junction grading coefficient mof the composite pn-junction structure is based on a combination of the first and second partial junction grading coefficients m, m.