The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Aug. 08, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jin-Wook Kim, Hwaseong-si, KR;
Ju-Youn Kim, Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including first, second, third, and fourth regions, a first gate structure on the first region, a second gate structure on the second region, a third gate structure on the third region, and a fourth gate structure on the fourth region. The first gate structure includes a first gate insulating layer, a first material layer, and a first gate electrode layer. The second gate structure includes a second gate insulating layer, a second material layer, and a second gate electrode layer. The third gate structure includes a third gate insulating layer, a third material layer, and a third gate electrode layer. The fourth gate structure includes a fourth gate insulating layer and a fourth gate electrode layer. The first, second, and third material layers have different thicknesses. The first material layer includes a lower metal layer, an upper metal layer, and a polysilicon layer therebetween.