The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Sep. 04, 2019
Kokusai Electric Corporation, Tokyo, JP;
Tsukasa Kamakura, Toyama, JP;
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
Described herein is a technique capable of forming a film with uniform characteristics from an upper portion to a lower portion of a deep concave structure whose aspect ratio is high. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) placing a substrate comprising a deep concave structure constituted by at least an upper portion and a lower portion on a substrate support provided in a process chamber; (b) supplying a process gas into the process chamber to form a layer on an inner surface of the deep concave structure; and (c) discharging by-products generated in an inner space of the deep concave structure in (b) by setting a pressure of a process space defined by the process chamber to be lower than a pressure of the inner space of the deep concave structure.