The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Sep. 29, 2017
Applicant:
Soitec, Bernin, FR;
Inventor:
Frederic Allibert, Albany, NY (US);
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01); H01L 21/225 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2254 (2013.01); H01L 21/2255 (2013.01); H01L 21/3105 (2013.01); H01L 21/76254 (2013.01);
Abstract
A method for dissolving a buried oxide in a silicon-on-insulator wafer comprises providing a silicon-on-insulator wafer having a silicon layer attached to a carrier substrate via a buried oxide layer, and annealing the silicon-on-insulator wafer to at least partially dissolve the buried oxide layer. The method further comprises a step of providing an oxygen scavenging layer on or over the silicon layer before the annealing step.