The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Nov. 08, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Shinji Ueyama, Yokohama, JP;

Fumitaka Moroishi, Yokohama, JP;

Masato Kajinami, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/18 (2006.01); G01N 21/95 (2006.01); H01L 21/68 (2006.01);
U.S. Cl.
CPC ...
H01L 21/187 (2013.01); G01N 21/9501 (2013.01); H01L 21/68 (2013.01);
Abstract

A method for adjusting inclination between wafers may include providing a first infrared light onto a first grid pattern in a first region in a first wafer and a second grid pattern in a second wafer, the first and second grid patterns overlapping, calculating a first distance in the first region between the first and second wafers based on a first Moiré pattern from the overlapping first and second grid patterns, providing a second infrared light onto a third grid pattern in a second region in the first wafer and a fourth grid pattern in the second wafer, the third and fourth grid patterns overlapping, calculating a second distance in the second region between the first and second wafers based on a second Moiré pattern from the overlapping third and fourth grid patterns, and adjusting relative inclination between the first and second wafers based on the first and second distances.


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