The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Aug. 30, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Naoki Kusunoki, Yokohama Kanagawa, JP;

Toshiyuki Enda, Yokohama Kanagawa, JP;

Hiroki Tokuhira, Kawasaki Kanagawa, JP;

Takayuki Miyazaki, Setagaya Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/72 (2013.01);
Abstract

A storage device includes a first group of wirings extending in a first direction, a second group of wirings extending in a second direction, and memory cells between the first and second groups, each including a variable resistance element and a selection element becoming conductive when a voltage greater than a threshold is applied. Va applied across a first cell to be selected satisfies Va>Vd>Vb and Va>Vd>Vc. A first wiring of the first group and a second wiring of the second group are connected to the first cell. A third wiring of the first group and a fourth wiring of the second group are adjacent to the first wiring and the second wiring. Vb, Vc, and Vd are applied across a second cell between the first and fourth wirings, a third cell between the second and third wirings, and a fourth cell between the third and fourth wirings.


Find Patent Forward Citations

Loading…